BCV46 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm

2 Kupferbelag (Lötpad) an jedem Anschluß

Darlington Transistors

BCV26, BCV46

Characteristics (T

j = 25/C)

Kennwerte (T

j = 25/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung

- I

C = 100 mA, - IB = 0.1 mA

BEsat

–

1.5 V

DC current gain – Kollektor-Basis-Stromverhältnis

- V

CE = 5 V, - IC = 1 mA

BCV26

BCV46

4000

2000

–

- V

CE = 5 V, - IC = 10 mA

BCV26

BCV46

10000

4000

–

- V

CE = 5 V, - IC = 100 mA

BCV26

BCV46

20000

10000

–

Base-Emitter voltage – Basis-Emitter-Spannung

- V

CE = 5 V, - IC = 10 mA

- V

BEon

–

1.4 V

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

–

220 MHz

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

BCV27, BCV47

Marking – Stempelung

BCV26 = FD

BCV46 = FE

Pinning – Anschlußbelegung

BCV46 데이터시트(PDF) 2 Page - Diotec Semiconductor

BCV46 데이터시트(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

데이터시트 다운로드

링크 URL