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2N5495 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5495 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2N5495 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) · Low Saturation Voltage- : VCE (sat)= 1V(Max)@IC= 3A APPLICATIONS · Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEV Collector-Emitter Voltage VBE= -1.5V 60 V VCER Collector-Emitter Voltage RBE= 100Ω 50 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current 3 A PC Collector Power Dissipation @ Ta=25℃ 1.8 W Collector Power Dissipation @ TC=25℃ 50 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.5 ℃ /W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃ /W |
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