2SC3349 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistor

2SC3449

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CBO

Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

800

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 5mA; RBE= ∞

500

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= 1m A; IC= 0

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

1.5

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

μA

hFE-1

DC Current Gain

IC= 0.6A; VCE= 5V

hFE-2

DC Current Gain

IC= 3A; VCE= 5V

Current-Gain—Bandwidth Product

IC= 0.6A; VCE= 10V

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

Switching Times

ton

Turn-on Time

IC= 4A, IB1= 0.8A; IB2= -1.6A

RL= 50Ω; VCC= 200V

0.5

μs

tstg

Storage Time

3.0

μs

Fall Time

0.3

μs



hFE-1 Classifications

15-30

20-40

30-50

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