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ST2SC4375U 데이터시트(PDF) 1 Page - Nanjing International Group Co |
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ST2SC4375U 데이터시트(HTML) 1 Page - Nanjing International Group Co |
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1 / 3 page ![]() Dated: 26/12/2013 Rev: 01 ST 2SC4375U NPN Silicon Epitaxial Planar Transistor High current application Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current IC 1.5 A Total Power Dissipation Ptot 0.5 1 1) W Junction Temperature TJ 150 ℃ Storage Temperature Range TStg - 55 to + 150 ℃ 1) When mounted on a 250 mm2 X 0.8 t ceramic substrate. Characteristics at Ta = 25℃ Parameter Symbol Min. Typ. Max. Unit DC Current Gain at VCE = 2 V, IC = 500 mA Current Gain Group O Y hFE hFE 100 160 - - 200 320 - - Collector Base Breakdown Voltage at IC = 1 mA V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at IC = 10 mA V(BR)CEO 30 - - V Emitter Base Breakdown Voltage at IE = 1 mA V(BR)EBO 5 - - V Collector Cutoff Current at VCB = 30 V ICBO - - 100 nA Emitter Cutoff Current at VEB = 5 V IEBO - - 100 nA Collector Emitter Saturation Voltage at IC = 1.5 A, IB = 30 mA VCE(sat) - - 2 V Base Emitter Voltage at VCE = 2 V, IC = 500 mA VBE - - 1 V Transition Frequency at VCE = 2 V, IC = 500 mA fT - 120 - MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz Cob - - 40 pF |
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