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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BAS16WS 데이터시트(PDF) 1 Page - Nanjing International Group Co |
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BAS16WS 데이터시트(HTML) 1 Page - Nanjing International Group Co |
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1 / 3 page  BAS16WS Silicon Epitaxial Planar Switching Diode Features • Fast switching diode Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Forward Current (Continuous) IF 250 mA Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs IFSM 0.5 1 2 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O C Storage Temperature Range Tstg - 65 to + 150 O C Characteristics at Ta = 25 OC Parameter Symbol Max. Unit Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF 0.715 0.855 1 1.25 V Reverse Leakage Current at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR 1 30 50 µA Diode Capacitance at VR = 0 V, f = 1 MHz Ctot 2 pF Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω trr 6 ns Anode 2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol 1 2 PINNING 1 PIN Cathode DESCRIPTION W2 |
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