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2SD1616 데이터시트(PDF) 2 Page - Unisonic Technologies |
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2SD1616 데이터시트(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTC 2SD1616/A NPN EPITAXIAL SILICON TRANSISTOR UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-008,A CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Storage Time ts IB1=-IB2=10mA 0.95 us Fall Time tf VBE(off)=-2~-3V 0.07 us Classification of hFE1 RANK Y G L hFE1 135-270 200-400 300-600 |
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