| 전자부품 데이터시트 검색엔진 |
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2SC4927 데이터시트(PDF) 2 Page - Hitachi Semiconductor |
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2SC4927 데이터시트(HTML) 2 Page - Hitachi Semiconductor |
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2 / 6 page ![]() 2SC4927 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage V CES 1500 V Emitter to base voltage V EBO 6V Collector current I C 8A Collector peak current I C(peak) 9A Collector surge current I C(surge) 18 A Collector power dissipation P C* 1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current I D 8A Note: 1. Value at T C = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown voltage V (BR)EBO 6— — V I E = 500 mA, IC = 0 Collector cutoff current I CES — — 500 µA V CE = 1500 V, RBE = 0 DC current transfer ratio h FE ——25 — V CE = 5 V, IC = 1 A Collector to emitter saturation voltage V CE(sat) ——5 V I C = 6 A, IB = 1.2 A Base to emitter saturation voltage V BE(sat) — — 1.5 V I C = 6 A, IB = 1.2 A C to E diode forward voltage V ECF — — 2.0 V I F = 8 A Fall time t f — — 0.5 µs I CP = 6 A, IB1 = 1.2 A, I B2 ≅ –2.4 A, fH = 31.5 kHz |
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