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3DD8B 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited

부품명 3DD8B
상세설명  Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
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제조업체  ISC [Inchange Semiconductor Company Limited]
홈페이지  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

3DD8B 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
3DD8B
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 5mA; IB= 0
50
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
5
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 5mA; IE= 0
50
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
2.0
V
ICEO
Collector Cutoff Current
VCE= 20V; IB= 0
2.0
mA
hFE
DC Current Gain
IC= 5A; VCE= 5V
10



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