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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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MMBT3906 데이터시트(PDF) 1 Page - Comchip Technology |
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MMBT3906 데이터시트(HTML) 1 Page - Comchip Technology |
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1 / 5 page  MMBT3906 Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904) Ideal for Medium Power Amplification and Switching General Purpose Transistor (PNP) www.comchiptech.com COMCHIP MDS030600 2A Page 1 PNP Silicon Type SOT-23 Dimensions in inches (millimeters) .037(0.95) .037(0.95) .119 (3.0) .020 (0.5) .020 (0.5) Top View .103 (2.6) .110 (2.8) .086 (2.2) .020 (0.5) 3 12 COLLECTOR 3 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance Junction to Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C |
유사한 부품 번호 - MMBT3906 |
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유사한 설명 - MMBT3906 |
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