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BU920P 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU920P 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Darlington Power Transistor BU920P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 350 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA 1.8 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 140mA 1.8 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 5A; IB= 50mA 2.2 V V BE(sat)-2 Base-Emitter Saturation Voltage IC= 7A; IB= 140mA 2.5 V ICES Collector Cutoff Current VCE= 400V;VBE= 0 VCE= 400V;VBE= 0;Tj= 125℃ 0.25 0.5 mA ICEO Collector Cutoff Current VCE= 350V; IB= 0 0.25 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 50 mA VECF C-E Diode Forward Voltage IF= 7A 2.5 V |
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