BV

R

DS(on) typ

I

Originative New Design

Superior Avalanche Rugged Technology

Robust Gate Oxide Technology

Very Low Intrinsic Capacitances

Excellent Switching Characteristics

Unrivalled Gate Charge : 23 nC (Typ.)

Extended Safe Operating Area

Lower R

DS(ON)

100% Avalanche Tested

FEATURES

Absolute Maximum Ratings

T

unless otherwise specified

HCD65R360S / HCU65R360S

650V N-Channel Super Junction MOSFET

June 2015

Symbol

Parameter

Value

Units

V

DSS

Drain-Source Voltage

650

V

I

D

Drain Current

– Continuous (T

)

11

A

Drain Current

– Continuous (T

)

7

A

I

DM

Drain Current

– Pulsed

(Note 1)

33

A

V

GS

Gate-Source Voltage

20

V

E

AS

Single Pulsed Avalanche Energy

(Note 2)

300

mJ

I

AR

Avalanche Current

(Note 1)

3.0

A

E

AR

Repetitive Avalanche Energy

(Note 1)

0.6

mJ

dv/dt

Peak Diode Recovery dv/dt

15

V/ns

P

D

Power Dissipation (T

)*

2.5

W

Power Dissipation (T

)

- Derate above 25

100

W

0.8

W/

T

Operating and Storage Temperature Range

-55 to +150

T

L

Maximum lead temperature for soldering purposes,

1/8” from case for 5 seconds

300

1.Gate 2. Drain 3. Source

2

1

2

3

1

3

D-PAK

I-PAK

HCD65R360S HCU65R360S

Thermal Resistance Characteristics

Symbol

Parameter

Typ.

Max.

Units

R

JC

Junction-to-Case

--

1.5

/W

R

JA

Junction-to-Ambient*

--

50

R

JA

Junction-to-Ambient

--

110

* When mounted on the minimum pad size recommended (PCB Mount)