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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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CTL0642NS-R3 데이터시트(PDF) 1 Page - CT Micro International Corporation |
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CTL0642NS-R3 데이터시트(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page  CT Micro Rev 2 Proprietary & Confidential Page 1 Jun, 2015 CTL0642NS-R3 N-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS 20 V • Drain-Source On-Resistance RDS(ON) 17m Ω, at VGS= 4.5V, IDS= 6.4A RDS(ON) 20m Ω, at VGS= 2.5V, IDS= 5.5A RDS(ON) 25m Ω, at VGS= 1.8V, IDS= 5.0A • Continuous Drain Current at TA=25℃ ID = 6.4A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free • ESD protection Applications • Power Management • Battery Powered System • Portable Equipment • DC/DC Converter Description The CTL0642NS-R3 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. Gate Source Drain Gate Drain Source |
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