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CTLM13PS05-R3 데이터시트(PDF) 4 Page - CT Micro International Corporation |
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CTLM13PS05-R3 데이터시트(HTML) 4 Page - CT Micro International Corporation |
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4 / 11 page ![]() CT Micro Rev 1 Proprietary & Confidential Page 4 Jun, 2015 CTLM13PS05-R3 P-Channel Enhancement MOSFET Drain-Source Diode Characteristics Symbol Parameters Test Conditions Min Typ Max Units Notes VSD Body Diode Forward Voltage VGS = 0V, ID = -0.1A - -2.5 - V ISD Body Diode Continuous Current - - -0.13 A 1 Note: 1. The power dissipation is limited by 150 ℃ junction temperature. 2. Device mounted on a glass-epoxy board 3. The data tested by pulsed , pulse width 300 µs , duty cycle 2% 4. Thermal Resistance follow JESD51-3. FR-4 25.4 × 25.4 mm . 2 Oz Copper Actual Size |
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