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CTLM16PS05-R3 데이터시트(PDF) 1 Page - CT Micro International Corporation |
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CTLM16PS05-R3 데이터시트(HTML) 1 Page - CT Micro International Corporation |
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1 / 11 page ![]() CT Micro Rev 1 Proprietary & Confidential Page 1 Jun, 2015 CTLM16PS05-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 50 V • Drain-Source On-Resistance RDS(ON) 2 Ω, at VGS= - 10V, IDS= - 100mA RDS(ON) 2 Ω, at VGS= - 5.0V, IDS= - 100mA • Continuous Drain Current at TA=25℃ ID = - 160mA • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch Description The CTLM16PS05-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
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