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STM4417 데이터시트(PDF) 3 Page - M.S. Kennedy Corporation

부품명 STM4417
상세설명  P-Channel Enhancement Mode Field Effect Transistor
PDF  7 Pages
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제조업체  MSK [M.S. Kennedy Corporation]
홈페이지  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

STM4417 데이터시트(HTML) 3 Page - M.S. Kennedy Corporation

  STM4417 Datasheet HTML 1Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 2Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 3Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 4Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 5Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 6Page - M.S. Kennedy Corporation STM4417 Datasheet HTML 7Page - M.S. Kennedy Corporation  
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Ver 1.0
www.samhop.com.tw
Apr,24,2013
3
T j ( °
C )
-VDS, Drain-to-Source Voltage(V)
Figure 1. Output Characteristics
-VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
-ID, Drain Current(A)
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Tj, Junction Temperature(° C )
Figure 6. Breakdown Voltage Variation
with Temperature
STM4417
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
125 150
100
75
50
25
0
-25
-50
1.15
1.10
1.05
1.00
0.95
0.90
0.85
125 150
100
75
50
25
0
-25
-50
80
64
48
32
16
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V G S = -3V
V G S = -3.5V
V G S = -4V
V G S = -4.5V
30
24
18
12
6
0
0
0.7
4.2
3.5
2.8
2.1
1.4
25 C
125 C
-55 C
30
25
20
15
10
5
0
1
VGS = -10V
VGS =-4.5V
2.0
1.8
1.6
1.4
1.2
1.0
0
0
100
75
25
50
125
150
G S
=-10V
=-5A
V
ID
V GS =-4.5V
ID= -4.3A
V DS =V GS
ID=-250uA
ID=-250uA
V G S = -10V
80
64
48
32
16



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