BUX348 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

0.58

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 10

Ω)

VCE = VCEV

Tc = 100

0.4

ICEV

Collector Cut-off

Current

(VBE = -1.5V)

VCE = VCEV

Tc = 100

0.4

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 5 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 0.2 A

L = 25 mH

450

VEBO

Emitter-Base Voltage

(IC = 0)

IE = 100 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 30 A

IB = 6 A

IC = 30 A

IB = 6 A

Tj = 100

0.7

1.35

0.9

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 30 A

IB = 6 A

IC = 30 A

IB = 6 A

Tj = 100

1.12

1.1

1.5

diC/dt

Rated of Rise on-state

Collector Current

VCC = 300V IB1 = 9 A

RC = 0

tp = 3

µs

Tj = 100

125

250

µs

VCE(3µs)∗

Collector-Emitter

Dynamic Voltage

VCC = 300V

IB1 = 9 A

RC = 10

Ω

Tj = 100

4.4

VCE(5µs)∗

Collector-Emitter

Dynamic Voltage

VCC = 300V

IB1 = 9 A

RC = 10

Ω

Tj = 100

2.3

INDUCTIVE LOAD

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Storage Time

Fall Time

Crossover Time

VCC = 50 V

VClamp = 450 V

IC = 30 A

IB1 = 6 A

VBB = -5 V

LC = 80

µH

RBB = 0.4

Ω

Tj = 100

2.75

0.12

0.44

4.5

0.4

0.7

µs

VCEW

Maximum Collector

Emitter Voltage

without Snubber

VCC = 50 V

ICWoff = 45 A

VBB = -5 V

IB1 = 6 A

LC = 55

µH

RBB = 0.4

Ω

Tj = 125

450

* Pulsed : Pulse duration = 300 ms, duty cycle = 2%

BUX348

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