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2SK1809 데이터시트(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1809 데이터시트(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2SK1809 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 600 V V(BR)GSS Gate-Source Breakdown Voltage VDS= 0; IG= 100μA ±30 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 2.0 3.0 V VDF Body to drain diode forward voltage IS= 5A, VGS = 0 0.9 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 1.5 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±10 μA IDSS Zero Gate Voltage Drain Current VDS=500V; VGS= 0 250 μA Ciss Input capacitance VDS=10V; VGS=0V; fT=1MHz 1000 pF Crss Reverse transfer capacitance 45 Coss Output capacitance 250 tr Rise time VGS=10V; ID=2.5A; VDD=200V; RL=12Ω 45 ns ton Turn-on time 12 tf Fall time 55 toff Turn-off time 105 PDF pdfFactory Pro www.fineprint.cn |
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