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ACE4922B 데이터시트(PDF) 2 Page - ACE Technology Co., LTD.

부품명 ACE4922B
상세설명  Dual N-Channel Enhancement Mode Field Effect Transistor
PDF  6 Pages
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제조업체  ACE [ACE Technology Co., LTD.]
홈페이지  http://www.ace-ele.com
Logo ACE - ACE Technology Co., LTD.

ACE4922B 데이터시트(HTML) 2 Page - ACE Technology Co., LTD.

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ACE4922BEM
Dual N-Channel Enhancement Mode Field Effect Transistor
VER 1.1
2
Absolute Maximum Ratings
Parameter
Symbol
Max
Unit
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
115
mA
Pulsed
IDP*1
800
Reverse Drain Current
Continuous
IDR
115
mA
Pulsed
IDR*1
800
Total Power Dissipation
Pd*2
225
mW
Channel Temperature
Tch
150
OC
Storage Temperature Range
Tstg
-55 to150
OC
Note:
1.
Pw≦10µs, Duty cycle≦1 %。
2.
When mounted on a 1*0.75*0.062 inch glass epoxy board。
Electrical CharacteristicsTA=25 OC unless otherwise noted
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS(Note 2)
Drain-Source Breakdown Voltage
V(BR)DSS
VGS=0V, ID=10µA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
1.0
uA
Gate-source Leakage
IGSS
VGS=±20V, VDS=0V
±10
nA
ON CHARACTERISTICS(Note 2)
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID= 250uA
1.0
1.85
2.5
V
Static Drain-Source
On-Resistance
RDS(ON)
VGS=10V, ID=0.5A
7.5
Ω
VGS=5V, ID=0.05A
7.5
Forward transfer admittance
gFS
VDS=10V, ID=0.2A
80
S
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
VDS=25V VGS=0V f=1.0MHz
25
50
pF
Output Capacitance
Coss
10
25
Reverse Transfer Capacitance
Crss
3.0
5.0
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Td(on)
ID=0.2A,VDD=30V,
VGS=10V,RL=150Ω,RG=10Ω
12
20
ns
Turn-Off Delay Time
Td(off)
20
30
Note: Pw ≦ 300 µs, Duty cycle ≦ 1%



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