DMNH6021SPSQ datasheet(2/7 Pages) DIODES

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DMNH6021SPSQ

Document number: DS38394 Rev.4 - 2

2 of 7

www.diodes.com

June 2016

DMNH6021SPSQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current, VGS = 10V (Note 8)

TC = +25°C

TC = +100°C

Maximum Continuous Body Diode Forward Current (Note 8)

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

Avalanche Current, L = 0.1mH (Note 9)

IAS

Avalanche Energy, L = 0.1mH (Note 9)

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

TA = +25°C

1.6

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RJA

°C/W

Total Power Dissipation (Note 7)

TA = +25°C

3.0

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

RJA

°C/W

Total Power Dissipation (Note 8)

TC = +25°C

Thermal Resistance, Junction to Case (Note 8)

RJC

1.5

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 10)

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

μA

VDS = 60V, VGS = 0V

Gate-Source Leakage

IGSS

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 10)

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

mΩ

VGS = 10V, ID = 12A

VGS = 4.5V, ID = 12A

Diode Forward Voltage

VSD

0.75

1.2

VGS = 0V, IS = 20A

DYNAMIC CHARACTERISTICS (Note 11)

Input Capacitance

Ciss

1,016

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

153

Reverse Transfer Capacitance

Crss

76.8

Gate Resistance

2.5

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

9.5

VDS = 30V, ID = 20A

Total Gate Charge (VGS = 10V)

19.7

Gate-Source Charge

Qgs

3.6

Gate-Drain Charge

Qgd

4.8

Turn-On Delay Time

tD(ON)

4.2

VDD = 30V, VGS = 10V,

ID = 10A, Rg = 4.7Ω

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

27.5

Turn-Off Fall Time

15.3

Body Diode Reverse Recovery Time

tRR



20.8



IF = 20A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR



13.9



Notes:

6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.

8. Thermal resistance from junction to soldering point (on the exposed drain pad).

9. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

10. Short duration pulse test used to minimize self-heating effect.

11. Guaranteed by design. Not subject to product testing.

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