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NHS010B 데이터시트(PDF) 39 Page - Renesas Technology Corp |
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NHS010B 데이터시트(HTML) 39 Page - Renesas Technology Corp |
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39 / 41 page ![]() PD166031AT1U 6. Application example in principle R07DS1308EJ0100 Rev.1.00 Page 39 of 39 Oct. 30, 2015 6. Application example in principle RIN, RSEN, RAN values are in range of 2k to 50k depending microcontroller while R_L value is typically 4k. If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s value is typically 100k GND Network recommendation RGND Vbat VCC GND VCC GND Vbat In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V External diode is recommended in order to prevent reverse current toward control logic part at reverse battery condition. Note: If other component is installed to prevent reverse current at reverse battery condition, diode is not required in GND Network. Note: Approx. 1k additional resistor in parallel with the diode is recommended if Vf vaule of the diode is high. External diode and resistor are recommended in order to prevent reverse current toward control logic part at reverse battery condition and limit the current through ZDAZ at load dump condition. 100 is recommended as RGND. |
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