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CPC7556N 데이터시트(PDF) 3 Page - IXYS Corporation

부품명 CPC7556N
상세설명  Monolithic Construction
PDF  6 Pages
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제조업체  IXYS [IXYS Corporation]
홈페이지  http://www.ixys.com
Logo IXYS - IXYS Corporation

CPC7556N 데이터시트(HTML) 3 Page - IXYS Corporation

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INTEGRATED CIRCUITS DIVISION
3
www.ixysic.com
R04
CPC7556
1.4 Recommended Operating Conditions
1.5 General Conditions
Typical values are characteristic of the device at 25
C
and are the result of engineering evaluations. They are
provided for information purposes only and are not
part of the manufacturing testing requirements.
Unless otherwise noted, all electrical specifications
are listed for TA=25C.
1.6 DC Electrical Characteristics
Parameter
Symbol
Minimum
Maximum
Units
Diode Forward Current (Average)
IF
-
240
mArms
Reverse Voltage
VR
-
100
V
Operating Temperature Range
TA
-40
+125
C
Thermal Impedance
JA
120
-
C/W
Parameter
Conditions
Symbol
Minimum
Typical
Maximum
Units
Diode Bridge Characteristics:
Forward Current
-
IF
-
-
240
mArms
Diode Forward Voltage Drop
IF = 40mA
VF
0.83
0.91
0.97
V
IF = 250mA
1
1.3
1.49
Reverse Voltage Leakage Current
VR = 100V
IR
--
1
A
Thyrister Characteristics:
Gate Trigger Current
V+/ = VAK = 10V,
IAK = 110mA
IGT
0.5
1.2
1.8
mA
Gate Trigger Voltage
VGK
2.5
2.8
3.2
V
Trigger Current
-
IAKT
-25
40
mA
Hold Current
-
IH
70
100
-
mA
Peak Off State Voltage
VGK = 0V, IAK = 5 uA
VDRM
110
-
-
V



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