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V3021 데이터시트(PDF) 2 Page - EM Microelectronic - MARIN SA

부품명 V3021
상세설명  Ultra Low Power 1-Bit 32 kHz RTC
PDF  15 Pages
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제조업체  EMMICRO [EM Microelectronic - MARIN SA]
홈페이지  http://www.emmicroelectronic.com
Logo EMMICRO - EM Microelectronic - MARIN SA

V3021 데이터시트(HTML) 2 Page - EM Microelectronic - MARIN SA

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R
V3021
Copyright © 2005, EM Microelectronic-Marin SA
2
www.emmicroelectronic.com
Absolute Maximum Ratings
Parameter
Symbol
Conditions
Maximum voltage at VDD
VDDmax
VSS + 7.0V
Minimun voltage at VDD
VDDmin
VSS – 0.3V
Maximum voltage at any
signal pin
Vmax
VDD + 0.3V
Minimum voltage at any signal
pin
Vmin
VSS – 0.3V
Maximum storage
temperature
TSTOmax
+150°C
Minimum storage temperature
TSTOmin
-65°C
Electrostatic discharge
maximum to MIL-STD-883C
method 3015.7 with ref. to VSS
VSmax
1000V
Maximum soldering conditions
TSmax
250°C x 10s
Table 1
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Operating temperature
TA
-40
+125
°C
Logic supply voltage
VDD
2.0
5.0
5.5
V
Supply voltage dv/dt
(power-up & power-down)
6
V/µs
Decoupling capacitor
100
nF
Crystal Characteristics
Frequency
1)
f
32.768
kHz
Load capacitance
CL
7
8.2
12.5
pF
Series resistance
RS
35
50
k
Ω
Table 2
1)
See Fig. 3
Electrical Characteristics (standard temperature range)
VDD= 5.0V ±10%, VSS = 0V and TA=-40 to +85°C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Total static supply
ISS
All outputs open, all inputs at VDD
VDD = 3.0V, address 0 = 0
0.8
1.8
µA
Total static supply
ISS
All outputs open, all inputs at VDD
VDD = 5V, address 0 = 0
TA = +25°C
1.3
10
3
µA
µA
Dynamic current
ISS
I/O to VSS through 1MΩ
RD = VSS, WR = VDD,
CS = 4 MHz
address 0 = 0, read all 0
300
µA
Input / Output
Input logic low
VIL
1.0
V
Input logic high
VIH
3.5
V
Output logic low
VOL
IOL = 4 mA
0.4
V
Output logic high
VOH
IOH = 4 mA
2.4
V
Input leakage
IIN
0.0 < VIN < 5.0V
0.1
1
µA
Output tri-state leakage on I/O
pin
ITS
CS high, and address 0, bit 0, low
0.1
1
µA
Oscillator
Starting voltage
VSTA
1.8
V
Input capacitance on XI
CIN
TA = +25°C
13
pF
Output capacitance on XO
COUT
TA = +25°C
9
pF
Start-up time
TSTA
1
s
Frequency stability
∆f/f
1.5 ≤ VDD ≤ 5.5V, TA = +25°C
0.3
0.5
ppm/V
Frequency Measurement Mode
Current source on I/O pin
pulsed on/off @ 256 Hz
IONF
CS high, addr.0, bit 0, high
VI/O = 1V
10
25
60
µA
Table 3



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