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DMN3035LWN 데이터시트(PDF) 5 Page - Diodes Incorporated |
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DMN3035LWN 데이터시트(HTML) 5 Page - Diodes Incorporated |
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5 / 7 page ![]() DMN3035LWN Document number: DS37528 Rev. 2 - 2 5 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3035LWN 0 5 10 15 20 0 0.3 0.6 0.9 1.2 1.5 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current VGS=0V, TA=-55℃ VGS=0V, TA=+25℃ VGS=0V, TA=+85℃ VGS=0V, TA=+125℃ VGS=0V, TA=+150℃ 1 10 100 1000 10000 0 5 10 15 20 25 30 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance f=1MHz Ciss Coss Crss 0 2 4 6 8 10 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge VDS=15V, ID=5.8A 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area T J(Max)=+150℃ T A=+25℃ Single Pulse DUT on 1*MRP board V GS=10V R DS(ON) Limited DC PW=10s PW=1s PW=100ms PW=10ms PW=1ms PW=100ms |
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