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MP4513 데이터시트(PDF) 1 Page - Toshiba Semiconductor |
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MP4513 데이터시트(HTML) 1 Page - Toshiba Semiconductor |
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1 / 6 page ![]() MP4513 2002-11-20 1 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4513 High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. · Package with heat sink isolated to lead (SIP 12 pin) · High collector power dissipation (4 devices operation) : PT = 5 W (Ta = 25°C) · High collector current: IC (DC) = 5 A (max) · High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 3 A) · Diode included for absorbing fly-back voltage. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V DC IC 5 Collector current Pulse ICP 8 A Continuous base current IB 0.1 A Collector power dissipation (1 device operation, Ta = 25°C) PC 3.0 W Ta = 25°C 5.0 Collector power dissipation (4 devices operation) Tc = 25°C PT 25 W Isolation voltage VIsol 1000 V Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Array Configuration Industrial Applications Unit: mm JEDEC ― JEITA ― TOSHIBA 2-32B1A Weight: 6.0 g (typ.) 1 R1 R2 7 R1 ≈ 5 kΩ R2 ≈ 150 Ω 6 12 8 5 2 3 10 4 9 11 |
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