TPC8201

2003-02-20

1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI)

TPC8201

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

l Low drain−source ON resistance

l Low leakage current

l Enhancement−mode

Characteristics

Symbol

Rating

Unit

Drain-source voltage

30

V

30

V

Gate-source voltage

±20

V

D C

(Note 1)

5

Drain curren

Pulse

(Note 1)

20

A

Single-device

operation

(Note 3a)

1.5

Drain power

dissipation

(t = 10s)

(Note 2a)

Single-device value

at dual operation

(Note 3b)

1.1

W

Single-device

operation

(Note 3a)

0.75

Drain power

dissipation

(t = 10s)

(Note 2b)

Single-device value

at dual operation

(Note 3b)

0.45

W

Single pulse avalanche energy

(Note 4)

32.5

mJ

Avalanche current

5

A

Repetitive avalanche energy

Single-device value at operation

(Note 2a, 3b, 5)

0.1

mJ

Channel temperature

150

°C

Storage temperature range

−55~150

°C

Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-6J1E

Weight: 0.08 g (typ.)

Circuit Configuration