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74LVC2G07 데이터시트(PDF) 4 Page - NXP Semiconductors

부품명 74LVC2G07
상세설명  Buffers with open-drain outputs
PDF  13 Pages
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제조업체  PHILIPS [NXP Semiconductors]
홈페이지  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74LVC2G07 데이터시트(HTML) 4 Page - NXP Semiconductors

  74LVC2G07 Datasheet HTML 1Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 2Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 3Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 4Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 5Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 6Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 7Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 8Page - NXP Semiconductors 74LVC2G07 Datasheet HTML 9Page - NXP Semiconductors Next Button
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2004 Sep 08
4
Philips Semiconductors
Product specification
Buffers with open-drain outputs
74LVC2G07
handbook, halfpage
MNB092
1A
1Y
1
6
2A
2Y
3
4
Fig.3 Logic symbol.
handbook, halfpage
6
1
1A
1Y
MNB093
4
3
2A
2Y
Fig.4 IEEE/IEC logic symbol.
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
active mode
0
VCC
V
VCC = 0 V; Power-down mode
0
5.5
V
Tamb
operating ambient temperature
−40
+125
°C
tr, tf
input rise and fall times
VCC = 1.65 V to 2.7 V
0
20
ns/V
VCC = 2.7 V to 5.5 V
0
10
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
−0.5
+6.5
V
IIK
input diode current
VI <0V
−−50
mA
VI
input voltage
note 1
−0.5
+6.5
V
IOK
output diode current
VO <0V
−−50
mA
VO
output voltage
active mode; notes 1 and 2
−0.5
+6.5
V
Power-down mode; notes 1 and 2
−0.5
+6.5
V
IO
output source or sink current
VO =0Vto6.5 V
50
mA
ICC, IGND
VCC or GND current
−±100
mA
Tstg
storage temperature
−65
+150
°C
Ptot
power dissipation
Tamb = −40 °C to +125 °C
300
mW



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