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DS2004C 데이터시트(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 DS2004C
상세설명  High Current/Voltage Darlington Drivers
PDF  8 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

DS2004C 데이터시트(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Storage Temperature Range
Ceramic DIP
b
65 Cto a175 C
Molded DIP
b
65 Cto a150 C
Operating Temperature Range
DS2003MDS9667M
b
55 Cto a125 C
DS2004M
b
55 Cto a125 C
DS2003TDS9667T
b
40 Cto a105 C
DS2004T
b
40 Cto a105 C
DS2003CDS9667C
0 Cto a85 C
DS2004C
0 Cto a85 C
Lead Temperature
Ceramic DIP (Soldering 60 seconds)
300 C
Molded DIP (Soldering 10 seconds)
265 C
Maximum Power Dissipation at 25 C
Cavity Package
2016 mW
Molded Package
1838 mW
SO Package
926 mW
Derate cavity package 1613 mW C above 25 C derate molded DIP pack-
age 147 mW C above 25 C Derate SO package 74 mW C
Input Voltage
30V
Output Voltage
55V
Emitter-Base Voltage
60V
Continuous Collector Current
500 mA
Continuous Base Current
25 mA
Electrical Characteristics TA e 25 C unless otherwise specified (Note 2)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
ICEX
Output Leakage
TA e 25 C VCE e 50V (Figure 1a)
20
Current
TA e 85 C VCE e 50V (Figure 1a) for Commercial Grade
100
m
A
TA e 25 C VCE e 50V VI e 10V (Figure 1b)
DS2004
500
VCE(Sat)
Collector-Emitter
IC e 350 mA IB e 500 mA (Figure 2) (Note 3)
125
16
Saturation Voltage
IC e 200 mA IB e 350 mA (Figure 2)
11
13
V
IC e 100 mA IB e 250 mA (Figure 2)
09
11
II(ON)
Input Current
VI e 385V (Figure 3)
DS2003DS9667
093
135
mA
VI e 50V (Figure 3)
DS2004
035
05
VI e 12V (Figure 3)
10
145
II(OFF)
Input Current
TA e 85 C for Commercial
50
100
m
A
(Note 4)
IC e 500 mA (Figure 4)
VI(ON)
Input Voltage
VCE e 20V IC e 200 mA (Figure 5)
DS2003DS9667
24
(Note 5)
VCE e 20V IC e 250 mA (Figure 5)
27
VCE e 20V IC e 300 mA (Figure 5)
30
V
VCE e 20V IC e 125 mA (Figure 5)
DS2004
50
VCE e 20V IC e 200 mA (Figure 5)
60
VCE e 20V IC e 275 mA (Figure 5)
70
VCE e 20V IC e 350 mA (Figure 5)
80
CI
Input Capacitance
15
30
pF
tPLH
Turn-On Delay
05 VI to 05 VO
10
m
s
tPHL
Turn-Off Delay
05 VI to 05 VO
10
m
s
IR
Clamp Diode
VR e 50V (Figure 6)
TA e 25 C50
m
A
Leakage Current
TA e 85 C
100
m
A
VF
Clamp Diode
IF e 350 mA (Figure 7)
17
20
V
Forward Voltage
Note 1
‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed They are not meant to imply that the devices
should be operated at these limits The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation
Note 2
All limits apply to the complete Darlington series except as specified for a single device type
Note 3
Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat) e 16V at 70 C with a pulse width of 20 ms and a duty cycle of
30%
Note 4
The II(OFF) current limit guaranteed against partial turn-on of the output
Note 5
The VI(ON) voltage limit guarantees a minimum output sink current per the specified test conditions
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