April 1995

3

Philips Semiconductors

Product specification

N-channel vertical D-MOS transistor

BST70A

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL RESISTANCE

Note

1. Transistor mounted on printed circuit board, max. lead length 4 mm, mounting pad for drain lead

min. 10 mm

× 10 mm.

Drain-source voltage

max.

80 V

Gate-source voltage (open drain)

max.

20 V

Drain current (DC)

max.

0.5 A

Drain current (peak)

max.

1.0 A

max.

1 W

Storage temperature range

− 65 to + 150 °C

Junction temperature

max.

150

°C

From junction to ambient (note 1)

=

125 K/W