J201 datasheet(1/1 Pages) INTERFET

부품명	J201

상세설명	N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

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제조업체	INTERFET [InterFET Corporation]

홈페이지	http://www.interfet.com

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1 / 1 page

B-54

01/99

J201, J202

N-Channel Silicon Junction Field-Effect Transistor

¥ Audio Amplifiers

¥ General Purpose Amplifiers

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 40 V

Continuous Forward Gate Current

50 mA

Continuous Device Power Dissipation

360 mW

Power Derating

3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ201, SMPJ202

At 25°C free air temperature:

J201

J202

Process NJ16

Static Electrical Characteristics

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 40

V

IG = – 1µA, VDS = ØV

Gate Reverse Current

IGSS

– 100

pA

VGS = – 20V, VDS = ØV

Gate Operating Current

IG

– 10

pA

VDG = 20V, ID = IDSS(min)

Gate Source Cutoff Voltage

VGS(OFF)

– 0.3

– 1.5

– 0.8

– 4

V

VDS = 20V, ID = 10 nA

Drain Saturation Current (Pulsed)

IDSS

0.2

1

0.9

4.5

mA

VDSS = 15V, VGS = ØV

Dynamic Electrical Characteristics

Common Source Forward

gfs

500

1000

µS

VDS = 20V, VGS = ØV

f = 1 kHz

Transconductance

Common Source Output Conductance

gos

1

3.5

µS

VDS = 20V, VGS = ØV

f = 1 kHz

Common Source Input Capacitance

Ciss

44

pF

VDS = 20V, VGS = ØV

f = 1 MHz

Common Source Reverse

Crss

11

pF

VDS = 20V, VGS = ØV

f = 1 MHz

Transfer Capacitance

Equivalent Short Circuit Input

¯eN

55

nV/

√Hz

VDS = 10V, VGS = ØV

f = 1 kHz

Noise Voltage

1000 N. Shiloh Road, Garland, TX 75042

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www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-54

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