J308 datasheet(1/1 Pages) INTERFET

부품명	J308

상세설명	N-Channel Silicon Junction Field-Effect Transistor

PDF	1 Pages

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제조업체	INTERFET [InterFET Corporation]

홈페이지	http://www.interfet.com

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1 / 1 page

01/99

B-61

J308, J309

N-Channel Silicon Junction Field-Effect Transistor

Absolute maximum ratings at TA = 25¡C

Reverse Gate Source & Reverse Gate Drain Voltage

– 25 V

Continuous Forward Gate Current

10 mA

Continuous Device Power Dissipation

360 mW

Power Derating

3.27 mW/°C

TOÐ226AA Package

Dimensions in Inches (mm)

Pin Configuration

1 Drain, 2 Source, 3 Gate

Surface Mount

SMPJ308, SMPJ309

At 25°C free air temperature:

J308

J309

Process NJ72

Static Electrical Characteristics

Min

Typ

Max

Min

Typ

Max

Unit

Test Conditions

Gate Source Breakdown Voltage

V(BR)GSS

– 25

V

IG = – 1µA, VDS = ØV

Gate Reverse Current

IGSS

– 1

nA

VGS = – 15V, VDS = ØV

– 1

µA

VGS = – 15V, VDS = ØV

TA = +125°C

Gate Source Cutoff Voltage

VGS(OFF)

– 1

– 6.5

– 1

– 4

V

VDS = 10V, ID = 1 nA

Gate Source Forward Voltage

VGS(F)

11

V

VDS = ØV, IG = 1 mA

Drain Saturation Current (Pulsed)

IDSS

12

60

12

30

mA

VDS = 10V, VGS = ØV

Dynamic Electrical Characteristics

Common Source Forward Transconductance

gfs

8000 17000

10000 17000

µS

VDS = 10V, ID = 10 mA

f = 1 kHz

Common Source Output Conductance

gos

250

µS

VDS = 10V, ID = 10 mA

f = 1 kHz

Common Gate Forward Transconductance

gfg

13000

µS

VDS = 10V, ID = 10 mA

f = 1 kHz

Common Gate Output Transconductance

gog

150

100

µS

VDS = 10V, ID = 10 mA

f = 1 kHz

Gate Drain Capacitance

Cdg

1.8

2.5

1.8

2.5

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Gate Source Capacitance

Cgs

45

pF

VDS = ØV, VGS = – 10V

f = 1 MHz

Equivalent Short Circuit

¯eN

10

nV/

√Hz

VDS = 10V, ID = 10 mA

f = 100 kHz

Input Noise Voltage

Common Source Forward

Re(Yfs)

12

µS

VDS = 10V, ID = 10 mA

f = 105 MHz

Transconductance

Common Gate Input Conductance

Re(Yig)

14

µS

VDS = 10V, ID = 10 mA

f = 105 MHz

Common Source Input Conductance

Re(Yis)

0.4

µS

VDS = 10V, ID = 10 mA

f = 105 MHz

Common Source Output Conductance

Re(Gos)

0.15

µS

VDS = 10V, ID = 10 mA

f = 105 MHz

Common Gate Power Gain

Gpg

16

dB

VDS = 10V, ID = 10 mA

f = 105 MHz

at Noise Match

11

dB

VDS = 10V, ID = 10 mA

f = 450 MHz

Noise Figure

NF

1.5

dB

VDS = 15V, ID = 10 mA

f = 105 MHz

2.7

dB

VDS = 15V, ID = 10 mA

f = 450 MHz

¥ Mixers

¥ Oscillators

¥ VHF/UHF Amplifiers

1000 N. Shiloh Road, Garland, TX 75042

(972) 487-1287 FAX (972) 276-3375

www.interfet.com

Databook.fxp

1/13/99 2:09 PM

Page B-61

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