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MBR360 데이터시트(PDF) 2 Page - Diotec Semiconductor

부품명 MBR360
상세설명  Schottky Barrier Rectifier Diodes
PDF  2 Pages
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제조업체  DIOTEC [Diotec Semiconductor]
홈페이지  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

MBR360 데이터시트(HTML) 2 Page - Diotec Semiconductor

  MBR360 Datasheet HTML 1Page - Diotec Semiconductor MBR360 Datasheet HTML 2Page - Diotec Semiconductor  
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MBR360
Characteristics
Kennwerte
Leakage current
Sperrstrom
Tj = 25°C
Tj = 100°C
VR = VRRM
VR = VRRM
IR
IR
< 0.5 mA
< 20 mA
Typical junction capacitance – Typische Sperrschichtkapzität
VR = 4 V
Cj
150 pF
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 25 K/W 1)
Thermal resistance junction to leads
Wärmewiderstand Sperrschicht – Anschlussdraht
RthL
< 8 K/W
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG
120
100
80
60
40
20
0
[%]
I
FAV
Rated forward current versus ambient temperature )
Zul. Richtstrom in Abh. von der Umgebungstemp. )
1
1
[°C]
T
A
150
100
50
0
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
T = 125°C
j
10
10
1
10
10
2
-1
-2
[A]
I
F
0
V
F
0.4
0.6
[V]
1.0
T = 25°C
j
10
1
10
10
10
-1
-2
-3
[mA]
I
R
0
V
RRM
40
60
100
[%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
T = 25°C
j
T = 125°C
j
T = 75°C
j
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
10
10
1
2
[A]
î
F
1
10
10
[n]
10
2
3



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