DMN4026SSD

Document number: DS36351 Rev. 4 - 2

4 of 6

www.diodes.com

June 2014

© Diodes Incorporated

DMN4026SSD

0

0.005

0.01

0.015

0.02

0.025

0.03

0.035

0.04

-50 -25

0

25

50

75

100 125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I= 5A

GS

D

V=

V

I= 10A

GS

D

10

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = 25°C

A

T = -55°C

A

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIME (sec)

Figure 10 Transient Thermal Resistance

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

R

(t) = r(t) * R

R

= 94°C/W

Duty Cycle, D = t1/ t2

θθ

θ

JA

JA

JA