FRM430 datasheet(1/2 Pages) ISC

부품명	FRM430

상세설명	Second Generation Rad Hard MOSFET Results

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제조업체	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

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1

isc N-Channel MOSFET Transistor

FRM430

DESCRIPTION

·3A, 500V, RDS(on) = 2.5

Ω

·Second Generation Rad Hard MOSFET Results

From New Design Concepts

APPLICATIONS

It is specially designed and processed to

exhibit minimal characteristic changes to total dose and neutron

exposures. Design and processing efforts are also directed to

enhance survival to heavy ion (SEE) and/or dose rate

(GAMMA DOT) exposure.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

500

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=37℃

3

A

Ptot

Total Dissipation@TC=25℃

125

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.67

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

60

℃/W

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유사한 부품 번호 - FRM430

제조업체	부품명	데이터시트	상세설명
Intersil Corporation	FRM430D	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
	FRM430H	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998
	FRM430R	48Kb / 6P	3A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998

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Sensitron	SRADM1004	168Kb / 2P	HERMETIC RAD HARD POWER MOSFET
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	SRADM1008	153Kb / 2P	HERMETIC RAD HARD POWER MOSFET
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FRM430 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

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