DMP22D4UFA

Document number: DS35766 Rev. 2 - 2

4 of 6

www.diodes.com

May 2012

© Diodes Incorporated

DMP22D4UFA

0

0.2

0.4

0.6

0.8

1.0

1.2

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE( C)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

J

°

I = -250µA

D

I = -1mA

D

0

0.2

0.4

0.6

0.8

0.4

0.6

0.8

1.0

1.2

T = 25°C

A

V

, SOURCE- DRAIN VOLTAGE (V)

Fig. 8 Diodes Forward Voltage vs. Current

SD

V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

DS

f = 1MHz

C

iss

0

10

20

30

40

50

02

4

6

8

10

1

10

100

1,000

0

4

6

8

10

12

14

16

18

20

-V

, DRAIN-SOURCE VOLTAGE (V)

Fig. 10 Typical Leakage Current vs.

Drain-Source Voltage

DS

T = 150°C

A

T = 125°C

A

T = 85°C

A

T = -25°C

A

2

Q , TOTAL GATE CHARGE (nC)

Fig. 11 Gate Charge Characteristics

G

0

1

2

3

4

5

0

2

4

6

8

1012

1416

18

V

= 10V, I = -4.5A

DS

D