| 전자부품 데이터시트 검색엔진 |
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IRF362 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRF362 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRF362 DESCRIPTION ·silicon Gate for fast switching at elevate ·rugged APPLICATIONS ·suited for applications such as Switching power supplies,motor controls ,inverters, Choppers,audio amplifiers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 22 A Ptot Total Dissipation@TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.42 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 30 ℃/W PDF pdfFactory Pro www.fineprint.cn |
유사한 부품 번호 - IRF362 |
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유사한 설명 - IRF362 |
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