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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRFS634A 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFS634A 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFS634A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 5.8 A IDM Drain Current-Single Pluse 32 A PD Total Dissipation @TC=25℃ 38 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.92 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W PDF pdfFactory Pro www.fineprint.cn |
유사한 부품 번호 - IRFS634A |
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유사한 설명 - IRFS634A |
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