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74LVC2G04 데이터시트(PDF) 2 Page - Panasonic Semiconductor |
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74LVC2G04 데이터시트(HTML) 2 Page - Panasonic Semiconductor |
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2 / 14 page ![]() 2004 Sep 15 2 Philips Semiconductors Product specification Dual inverter 74LVC2G04 FEATURES • Wide supply voltage range from 1.65 V to 5.5 V • 5 V tolerant input/output for interfacing with 5 V logic • High noise immunity • Complies with JEDEC standard: – JESD8-7 (1.65 V to 1.95 V) – JESD8-5 (2.3 V to 2.7 V) – JESD8B/JESD36 (2.7 V to 3.6 V). • ESD protection: – HBM EIA/JESD22-A114-B exceeds 2000 V – MM EIA/JESD22-A115-A exceeds 200 V. •±24 mA output drive (VCC = 3.0 V) • CMOS low power consumption • Latch-up performance exceeds 250 mA • Direct interface with TTL levels • Multiple package options • Specified from −40 °C to +85 °C and −40 °C to +125 °C. DESCRIPTION The 74LVC2G04 is a high-performance, low-power, low-voltage, Si-gate CMOS device and superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. These feature allows the use of these devices as translators in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC2G04 provides two inverting buffers. QUICK REFERENCE DATA GND = 0 V; Tamb =25 °C. Notes 1. CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; ∑(CL × VCC2 × fo) = sum of outputs. 2. The condition is VI = GND to VCC. SYMBOL PARAMETER CONDITIONS TYPICAL UNIT tPHL/tPLH propagation delay inputs nA to outputs nY VCC = 1.8 V; CL = 30 pF; RL =1kΩ 3.5 ns VCC = 2.5 V; CL = 30 pF; RL = 500 Ω 2.2 ns VCC = 2.7 V; CL = 50 pF; RL = 500 Ω 2.7 ns VCC = 3.3 V; CL = 50 pF; RL = 500 Ω 2.7 ns VCC = 5.0 V; CL = 50 pF; RL = 500 Ω 1.9 ns CI input capacitance 2.5 pF CPD power dissipation capacitance per gate VCC = 3.3 V; notes 1 and 2 13.5 pF |
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