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MBR3045 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MBR3045 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() INCHANGE Semiconductor Product Specification isc website:www.iscsemi.cn Schottky Barrier Rectifier MBR3045 FEATURES · Dual Rectifier Conduction, Positive Center Tap · Low Power Loss/High Efficiency · High Current Capability · High Surge Capacity · Guarding for Overvoltage protection · For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current TC= 105℃ 30 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 275 A TJ Junction Temperature 170 ℃ Tstg Storage Temperature Range -55~170 ℃ ELECTRICAL CHARACTERISTICS(Pulse Test: Pulse Width≤300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 15A ; TC= 25℃ 0.69 V IR Maximum Instantaneous Reverse Current VR= 45V, TC= 25℃ 20 μ A |
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