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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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COP8CCR9LVA7/NOPB 데이터시트(PDF) 2 Page - Texas Instruments |
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COP8CCR9LVA7/NOPB 데이터시트(HTML) 2 Page - Texas Instruments |
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2 / 111 page  COP8CBR9, COP8CCR9, COP8CDR9 SNOS535I – OCTOBER 2000 – REVISED MARCH 2013 www.ti.com Table 1-1. Device included in this datasheet: Flash Program RAM Brownout I/O Device Memory Packages Temperature (bytes) Voltage Pins (bytes) 44 WQFN, COP8CBR9 32k 1k 2.7V to 2.9V 37,39,49, 59 44/68 PLCC, −40°C to +85°C 48/56 TSSOP 44 WQFN, −40°C to +85°C COP8CCR9 32k 1k 4.17V to 4.5V 37,39,49, 59 44/68 PLCC, −40°C to +125°C 48/56 TSSOP 44 WQFN, −40°C to +85°C COP8CDR9 32k 1k No Brownout 37,39,49, 59 44/68 PLCC, −40°C to +125°C 48/56 TSSOP These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 2 Introduction Copyright © 2000–2013, Texas Instruments Incorporated Submit Documentation Feedback Product Folder Links: COP8CBR9 COP8CCR9 COP8CDR9 |
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