CSD17381F4 datasheet(3/13 Pages) TI1

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CSD17381F4

www.ti.com

SLPS411D – APRIL 2013 – REVISED OCTOBER 2014

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 24 V

100

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 10 V

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = 250 μA

0.65

0.85

1.10

VGS = 1.8 V, IDS =0.5 A

160

250

Ω

VGS = 2.5 V, IDS =0.5 A

110

143

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V, IDS = 0.5 A

117

Ω

VGS = 8 V, IDS =0.5 A

109

Ω

gƒs

Transconductance

VDS = 15 V, IDS = 0.5 A

4.8

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

150

195

VGS = 0 V, VDS = 15 V,

Coss

Output Capacitance

ƒ = 1 MHz

Crss

Reverse Transfer Capacitance

2.2

2.9

Series Gate Resistance

Ω

Gate Charge Total (4.5 V)

1040

1350

Qgd

Gate Charge Gate-to-Drain

133

VDS = 15 V, IDS = 0.5 A

Qgs

Gate Charge Gate-to-Source

226

Qg(th)

Gate Charge at Vth

150

Qoss

Output Charge

VDS = 15 V, VGS = 0 V

1110

td(on)

Turn On Delay Time

3.4

Rise Time

1.4

VDS = 15 V, VGS = 4.5 V,

IDS = 0.5 A,RG = 2 Ω

td(off)

Turn Off Delay Time

10.8

tƒ

Fall Time

3.6

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = 0.5 A, VGS = 0 V

0.73

0.9

Qrr

Reverse Recovery Charge

1500

VDS= 15 V, IF = 0.5 A, di/dt = 300 A/μs

trr

Reverse Recovery Time

5.6

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

Junction-to-Ambient Thermal Resistance(1)

RθJA

°C/W

Junction-to-Ambient Thermal Resistance(2)

250

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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