CSD23381F4 datasheet(3/13 Pages) TI1

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CSD23381F4

www.ti.com

SLPS450E – OCTOBER 2013 – REVISED MAY 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, IDS = –250 μA

–12

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = –9.6 V

–100

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = –8 V

–50

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, IDS = –250 μA

–0.7

–0.95

–1.20

VGS = –1.8 V, IDS = –0.1 A

480

970

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = –2.5 V, IDS = –0.5 A

250

300

Ω

VGS = –4.5 V, IDS = –0.5 A

150

175

Ω

gƒs

Transconductance

VDS = –6 V, IDS = –0.5 A

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

236

VGS = 0 V, VDS = –6 V,

Coss

Output Capacitance

ƒ = 1 MHz

Crss

Reverse Transfer Capacitance

6.9

Series Gate Resistance

Ω

Gate Charge Total (4.5 V)

1140

Qgd

Gate Charge Gate-to-Drain

190

VDS = –6 V, IDS = –0.5 A

Qgs

Gate Charge Gate-to-Source

300

Qg(th)

Gate Charge at Vth

145

Qoss

Output Charge

VDS = –6 V, VGS = 0 V

1290

td(on)

Turn On Delay Time

4.5

Rise Time

3.9

VDS = –6 V, VGS = –4.5 V,

IDS = –0.5 A, RG = 2 Ω

td(off)

Turn Off Delay Time

tƒ

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

ISD = –0.5 A, VGS = 0 V

–0.75

Qrr

Reverse Recovery Charge

1260

VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs

trr

Reverse Recovery Time

7.9

5.2 Thermal Information

(TA = 25°C unless otherwise stated)

THERMAL METRIC

TYPICAL VALUES

UNIT

Junction-to-Ambient Thermal Resistance(1)

RθJA

°C/W

Junction-to-Ambient Thermal Resistance(2)

245

(1)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

(2)

Device mounted on FR4 material with minimum Cu mounting area.

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