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CSD25481F4 데이터시트(PDF) 1 Page - Texas Instruments |
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CSD25481F4 데이터시트(HTML) 1 Page - Texas Instruments |
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1 / 13 page ![]() D G S 0.35 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD25481F4 SLPS420D – SEPTEMBER 2013 – REVISED OCTOBER 2014 CSD25481F4 20 V P-Channel FemtoFET™ MOSFET 1 Features Product Summary 1 • Ultra-Low On Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage –20 V • High Operating Drain Current Qg Gate Charge Total (–4.5 V) 913 pC Qgd Gate Charge Gate-to-Drain 153 pC • Ultra-Small Footprint (0402 Case Size) VGS = –1.8 V 395 m Ω – 1 mm × 0.6 mm Drain-to-Source RDS(on) VGS = –2.5 V 145 m Ω On-Resistance • Ultra-Low Profile VGS = –4.5 V 90 m Ω – 0.35 mm Max Height VGS(th) Threshold Voltage –0.95 V • Integrated ESD Protection Diode – Rated >4 kV HBM Ordering Information(1) – Rated >2 kV CDM Device Qty Media Package Ship 7-Inch • Lead and Halogen Free CSD25481F4 3000 Femto(0402) Reel Tape and 1.0 mm × 0.6 mm • RoHS Compliant Reel 7-Inch Land Grid Array (LGA) CSD25481F4T 250 Reel 2 Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Load Switch Applications • Optimized for General Purpose Switching Absolute Maximum Ratings Applications TA = 25°C unless otherwise stated VALUE UNIT • Battery Applications VDS Drain-to-Source Voltage –20 V • Handheld and Mobile Applications VGS Gate-to-Source Voltage –12 V ID Continuous Drain Current(1) –2.5 A 3 Description IDM Pulsed Drain Current(2) –10 A This 90 m Ω, 20 V P-Channel FemtoFET™ MOSFET Continuous Gate Clamp Current –35 IG mA is designed and optimized to minimize the footprint in Pulsed Gate Clamp Current(2) –350 many handheld and mobile applications. This PD Power Dissipation(1) 500 mW technology is capable of replacing standard small Human Body Model (HBM) 4 kV V (ESD) signal MOSFETs while providing at least a 60% Charged Device Model (CDM) 2 kV reduction in footprint size. TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range . (1) Typical RθJA = 85°C/W on 1 inch 2 (6.45 cm2), 2 oz. Typical Part Dimensions (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% Top View . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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