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BQ28Z560DRZR-R1 데이터시트(PDF) 2 Page - Texas Instruments

부품명 BQ28Z560DRZR-R1
상세설명  Single Cell Li-Ion Battery Gas Gauge
PDF  61 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

BQ28Z560DRZR-R1 데이터시트(HTML) 2 Page - Texas Instruments

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bq28z560-R1
SLUSBD3 – APRIL 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION(1)
TA
PART NUMBER
PACKAGE
TAPE AND REEL QUANTITY
bq28z560-R1DRZR
3000
12-pin, 2.5-mm × 4.0-mm
–40°C to 85°C
SON
bq28z560-R1DRZT
250
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder on ti.com (www.ti.com).
THERMAL INFORMATION
bq28z560-R1
THERMAL METRIC(1)
SON
UNITS
12 PINS
θJA
Junction-to-ambient thermal resistance(2)
186.4
θJC(top)
Junction-to-case(top) thermal resistance (3)
90.4
θJB
Junction-to-board thermal resistance (4)
110.7
°C/W
ψJT
Junction-to-top characterization parameter (5)
96.7
ψJB
Junction-to-board characterization parameter (6)
90
θJC(bottom)
Junction-to-case(bottom) thermal resistance (7)
n/a
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2)
The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as
specified in JESD51-7, in an environment described in JESD51-2a.
(3)
The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-
standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
(4)
The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB
temperature, as described in JESD51-8.
(5)
The junction-to-top characterization parameter,
ψJT, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA, using a procedure described in JESD51-2a (sections 6 and 7).
(6)
The junction-to-board characterization parameter,
ψJB, estimates the junction temperature of a device in a real system and is extracted
from the simulation data for obtaining
θJA , using a procedure described in JESD51-2a (sections 6 and 7).
(7)
The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific
JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88.
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Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: bq28z560-R1
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