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BQ78350DBTR-R1 데이터시트(PDF) 7 Page - Texas Instruments

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부품명 BQ78350DBTR-R1
상세설명  Battery Management Controller Companion
PDF  32 Pages
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제조업체  TI1 [Texas Instruments]
홈페이지  http://www.ti.com
Logo TI1 - Texas Instruments

BQ78350DBTR-R1 데이터시트(HTML) 7 Page - Texas Instruments

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SLUSCD0 – AUGUST 2015
8.8 Electrical Characteristics: Power-On Reset
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VIT
Negative-going voltage input
1.7
1.8
1.9
V
VHYS
Power-on reset hysteresis
50
125
200
mV
8.9
Electrical Characteristics: Oscillator
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
f(OSC)
Operating frequency
4.194
MHz
–3%
0.25%
3%
f(EIO)
Frequency error(1)(2)
TA = 20°C to 70°C
–2
0.25
2
t(SXO)
Start-up time(3)
2.5
5
ms
LOW FREQUENCY OSCILLATOR
f(LOSC)
Operating frequency
32.768
kHz
–2.5%
0.25%
2.5%
f(LEIO)
Frequency error(2)(4)
TA = 20°C to 70°C
–1.5
0.25
1.5
t(LSXO)
Start-up time(5)
500
ms
(1)
The frequency error is measured from 4.194 MHz.
(2)
The frequency drift is included and measured from the trimmed frequency at VCC = 2.5 V, TA = 25°C.
(3)
The start-up time is defined as the time it takes for the oscillator output frequency to be within 1% of the specified frequency.
(4)
The frequency error is measured from 32.768 kHz.
(5)
The start-up time is defined as the time it takes for the oscillator output frequency to be ±3%.
8.10 Electrical Characteristics: Data Flash Memory
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Data retention
See note(1)
10
Years
tDR
Flash programming write-cycles
See note(1)
20,000
Cycles
t(WORDPROG)
Word programming time
See note(1)
2
ms
I(DDdPROG)
Flash-write supply current
See note(1)
5
10
mA
(1)
Specified by design. Not production tested.
8.11 Electrical Characteristics: Register Backup
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RB) > V(RBMIN), VCC < VIT–
1500
nA
RB data-retention input
I(RB)
V(RB) > V(RBMIN), VCC < VIT–, TA = 0°C
current
40
160
to 50°C
RB data-retention
V(RB)
1.7
V
voltage (1)
8.12 SMBus Timing Specifications
VCC = 2.4 V to 2.6 V, TA = –40°C to 85°C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
NOM
MAX
UNIT
SMBus operating
fSMB
SLAVE mode, SMBC 50% duty cycle
10
100
kHz
frequency
SMBus master clock
MASTER mode, no clock low slave
fMAS
51.2
kHz
frequency
extend
Bus free time between
tBUF
4.7
µs
start and stop
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