DMP6185SE

Document Number DS36465 Rev. 4 - 2

4 of 6

www.diodes.com

January 2014

© Diodes Incorporated

DMP6185SE

-50 -25

0

25

50

75

100 125

150

T , JUNCTION TEMPERATURE ( C)

J

°

Figure 7 On-Resistance Variation with Temperature

0

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.1

V

= -4.5V

I=

A

GS

D

-10

-50

-25

0

25

50

75

100

125 150

T , AMBIENT TEMPERATURE (°C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

A

0

0.2

0.4

0.6

0.8

1

1.2

-I = 1mA

D

-I = 250µA

D

-V , SOURCE-DRAIN VOLTAGE (V)

Figure 9 Diode Forward Voltage vs. Current

SD

0

2

4

6

8

10

12

14

16

18

20

0

0.3

0.6

0.9

1.2

1.5

T= 125 C

A

°

T= 150 C

A

°

T= 85 C

A

°

T= 25 C

A

°

T= -55 C

A

°

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 10 Typical Junction Capacitance

DS

10

100

1000

10000

0

5

10

15

20

25

30

35

40

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 11 Gate-Charge Characteristics

g

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

V

= -30V

I = -12A

DS

D