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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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IRF7404 데이터시트(PDF) 2 Page - International Rectifier |
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IRF7404 데이터시트(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7404 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.040 VGS = -4.5V, ID = -3.2A ––– ––– 0.060 VGS = -2.7V, ID = -2.7A VGS(th) Gate Threshold Voltage -0.70 ––– ––– V VDS = VGS, ID = -250µA gfs Forward Transconductance 6.8 ––– ––– S VDS = -15V, ID = -3.2A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– ––– 50 ID = -3.2A Qgs Gate-to-Source Charge ––– ––– 5.5 nC VDS = -16V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = -4.5V, See Fig. 6 and 12 td(on) Turn-On Delay Time ––– 14 ––– VDD = -10V tr Rise Time ––– 32 ––– ID = -3.2A td(off) Turn-Off Delay Time ––– 100 ––– RG = 6.0Ω tf Fall Time ––– 65 ––– RD = 3.1Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance ––– 1500 ––– VGS = 0V Coss Output Capacitance ––– 730 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 340 ––– ƒ = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.0 V TJ = 25°C, IS = -2.0A, VGS = 0V trr Reverse Recovery Time ––– 69 100 ns TJ = 25°C, IF = -3.2A Qrr Reverse RecoveryCharge ––– 71 110 µC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ -3.2A, di/dt ≤ -65A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ––– ––– -27 ––– ––– -3.1 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance ––– 4.0 ––– LD Internal Drain Inductance ––– 2.5 ––– nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G S D G Surface mounted on FR-4 board, t ≤ 10sec. |
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