| 전자부품 데이터시트 검색엔진 |
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DP8432V 데이터시트(PDF) 31 Page - National Semiconductor (TI) |
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DP8432V 데이터시트(HTML) 31 Page - National Semiconductor (TI) |
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31 / 56 page ![]() 70 RAS and CAS Configuration Modes (Continued) TLF11118 – 39 FIGURE 26a DRAM Array Setup for 4 Banks Using Address Pipelining (C6 C5 C4 e 1 1 1 or C6 C5 C4 e 0 1 0 (Also Allowing Error Scrubbing) during Programming) TLF11118 – 40 FIGURE 26b DRAM Array Setup for Address Pipelining with 2 Banks (C6 C5 C4 e 1 0 1 or C6 C5 C4 e 0 0 1 (Also Allowing Error Scrubbing) during Programming) 74 ERROR SCRUBBING In error scrubbing during refresh the user selects one two or four RAS and CAS outputs per bank When performing error detection and correction memory is always accessed as words Since the CAS signals are not used to select individual bytes the ECAS inputs can be tied low as shown in Figures 27a and 27b TLF11118 – 41 FIGURE 27a DRAM Array Setup for 4 Banks Using Error Scrubbing (C6 C5 C4 e 0 1 0 during Programming) TLF11118 – 42 FIGURE 27b DRAM Array Setup for Error Scrubbing with 2 Banks (C6 C5 C4 e 0 0 1 during Programming) 31 |
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