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DMTH6010LPDQ 데이터시트(PDF) 4 Page - Diodes Incorporated

부품명 DMTH6010LPDQ
상세설명  DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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제조업체  DIODES [Diodes Incorporated]
홈페이지  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6010LPDQ 데이터시트(HTML) 4 Page - Diodes Incorporated

  DMTH6010LPDQ Datasheet HTML 1Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 2Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 3Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 4Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 5Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 6Page - Diodes Incorporated DMTH6010LPDQ Datasheet HTML 7Page - Diodes Incorporated  
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DMTH6010LPDQ
Document number: DS38517 Rev. 2 - 2
4 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMTH6010LPDQ
0
0.004
0.008
0.012
0.016
0.02
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 4.5V, ID = 20A
V
GS = 10V, ID = 20A
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
V
GS = 0V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
T
J = 175
oC
1
10
100
1000
10000
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
Q
g (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 20A
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on Infinite Heatsink
V
GS = 10V
R
DS(ON)
Limited
P
W = 1s
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs
P
W = 10µs
P
W = 1µs



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