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DP84910 데이터시트(PDF) 23 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
부품명 DP84910
상세설명  Integrated Read Channel
PDF  32 Pages
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제조업체  NSC [National Semiconductor (TI)]
홈페이지  http://www.national.com
Logo NSC - National Semiconductor (TI)

DP84910 데이터시트(HTML) 23 Page - National Semiconductor (TI)

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Control Register Description (Continued)
TABLE IIa Control Register Definitions
(Continued)
Bit
Bit Name
POR
Block
Function
BANK (10)
8
STR
SIGN
0
SYNC
Strobe Sign Bit (0 e pos 1 e neg)
9
STR0
0
SYNC
Strobe Bit0 (LSB)
10
STR1
0
SYNC
Strobe Bit1
11
STR2
0
SYNC
Strobe Bit2 (MSB)
12
CPRATIO
0
SYNC
Synchronizer Charge Pump Gain Control
BANK (11)
0
CR ADDR0
CR
Control Register Bank Address LSB (1)
1
CR ADDR1
CR
Control Register Bank Address MSB (1)
2
ERD0
0
PDSC
ERD Control Bit 0 (Note 1)
3
ERD1
0
PDSC
ERD Control Bit 1 (Note 1)
4
PREAM
2T
0
SYNC
Select 2T Preamble (3T if low)
5
INV
WG
1
PD
Select WG Polarity (1 e active low)
6
SLOW
1
PD
Select 17 ms Delay on AMPIN (Low e 34 ms delay)
7
HYS
VTH0
1
PD
Hysteresis Voltage Control Bit0 (LSB)
8
HYS
VTH1
0
PD
Hysteresis Voltage Control Bit1
9
HYS
VTH2
1
PD
Hysteresis Voltage Control Bit2 (MSB)
10
SERVO
EQ0
1
FILT
Filter BandwidthEqualization Control-Servo Bit0 (LSB)
11
SERVO
EQ1
1
FILT
Filter BandwidthEqualization Control-Servo Bit1
12
SERVO
EQ2
1
FILT
Filter BandwidthEqualization Control-Servo Bit2 (MSB)
Note 1
When ERD0 and ERD1 are both high the GCA is put into a fixed gain mode The synchronizer and synthesizer are put into test modes where their VCO’s
are driven by external signals
Pulse Detector Description
The purpose of the pulse detector is to convert the timing
information contained in the analog peaks of the disk wave-
form into a digital signal whose leading edge accurately rep-
resents the time position of the analog peaks
Raw disk data from the output of an external read preampli-
fier is capacitively coupled to the inputs of the DP84910’s
gain controlled amplifier (AMPIN1 AMPIN2) These inputs
are switched to low impedance when the WRITE GATE in-
put pin is enabled and stays at a low impedance for either
17 msor3 4 ms after WRITE GATE is disabled The amount
of delay is selectable via a bit in the control register (SLOW
Bank (11) bit 6) During this time any DC offsets accumu-
lated across the input coupling capacitors during the write
mode are removed Also during the write mode the AGC
voltage is held fixed and the input signal to the amplifier is
blocked DC offsets at the output of the amplifier are the
same for read or write modes
The gain controlled amplifier (GCA) accepts signals in the
range of 20 mV to 200 mV peak-to-peak differential and
produces a constant 500 mV peak-to-peak differential sig-
nal at the channel inputs (CHAN1 CHAN2) The channel
input signal amplitude is set by a voltage applied to the
VREF pin There is a one-to-one correspondence between
the voltage applied to the VREF pin and the peak-to-peak
differential signal at the GCA outputs The VREF voltage is
typically set by a voltage divider between supply and
ground A switched supply pin (SVCC) can be used to pro-
vide the supply reference for this divider
The gain of the GCA is controlled by a fast equal-attack
equal decay pattern insensitive exponential responding
automatic gain controlled (AGC) amplifier circuit The AGC
allows for fast settling within 3 ms for a 50% change in the
input signal level The exponential response of the AGC al-
lows the settling time to be independent of the input signal
level The response is pattern insensitive because the
charging or discharging of the AGC capacitor is allowed
only in the presence of a signal Thus large shoulder re-
gions will not cause the AGC voltage to droop A high im-
pedance AGC input pin allows for an AGC hold function with
very little leakage of the AGC capacitors’ charge
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