HBFP0420 datasheet(2/10 Pages) HP

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HBFP-0420 Absolute Maximum Ratings

Absolute

Symbol

Parameter

Units

Maximum[1]

EBO

Emitter-Base Voltage

1.5

CBO

Collector-Base Voltage

15.0

CEO

Collector-Emitter Voltage

4.5

Collector Current

Power Dissipation [2]

162

Junction Temperature

°C

150

STG

Storage Temperature

°C

-65 to 150

Thermal Resistance:

jc = 300°C/W

Notes:

1. Permanent damage may occur if

any of these limits are exceeded.

2. PT limited by maximum ratings.

Electrical Specifications, TC = 25°C

Symbol

Parameters and Test Conditions

Units

Min.

Typ.

Max.

DC Characteristics

BVCEO Collector-Emitter Breakdown Voltage

IC = 1 mA, open base

4.5

ICBO

Collector-Cutoff Current

VCB = 5 V, IE = 0

150

IEBO

Emitter-Base Cutoff Current

VEB = 1.5 V, IC = 0

µA15

hFE

DC Current Gain

VCE = 2 V, IC = 5 mA

—

150

RF Characteristics

FMIN

Minimum Noise Figure

IC = 5 mA, VCE = 2 V, f = 1.8 GHz

1.1

1.4

Associated Gain

IC = 5 mA, VCE = 2 V, f = 1.8 GHz

15.5

|S 21|

Insertion Power Gain

IC = 20 mA, VCE = 2 V, f = 1.8 GHz

P-1dB

Power Output @ 1 dB

IC = 20 mA, VCE = 2 V, f = 1.8 GHz dBm

Compression Point

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